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 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989
TD3165
Solar Array Blocking Diode
Features
* * * * * * * * * Very Thin Construction Passivated mesa structure for very low leakage reverse currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, extremely low profile ceramic seal package Diode assembly has matched thermal coefficient of expansion Weldable / Solderable interconnects Designed for Solar Cell protection from plasma ESD Extreme Temperature Cycling environments Generically similar to product used on the International Space Station Alpha Electrical Characteristics @ 25oC
Junction Temperature Range -100 to +175 oC
200 Volts 10 Amps
Applications
SYMBOL IR VF1 VF2 VF3 VF4 VF5 BVR
CHARACTERISTIC Reverse (Leakage) Current Forward Voltage Forward Voltage Forward Voltage Forward Voltage Forward Voltage Breakdown Voltage
CONDITIONS MAX VR = 180 Vdc 0.5 IF = 0.1 A pulse test pw=300ms, d/c<2% 710 IF = 0.5 A pulse test pw=300ms, d/c<2% 775 IF = 2.0 A pulse test pw=300ms, d/c<2% 850 IF = 5.0 A pulse test pw=300ms, d/c<2% 875 IF = 10 A pulse test pw=300ms, d/c<2% 950 IR = 100 uA (min) 200
UNITS uAmps mVolts mVolts mVolts mVolts mVolts Volts
Mechanical Outline
Screening
* * * * * Temperature Cycling High Temperature Reverse Bias Power Burn-In Electrical Cycling Hermeticity
Qualification
* * * * * Humidity Testing Thermal Cycling (20,000 cycles) Bond Strength Electrical Cycling ESD
MSC1048.PDF Updated: November 1998


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